Gelest SNT7560
- CAS Number
- 594-27-4
- Chemical Name
- Tetramethyltin
- Chemical Family
- Organometallics, Tin CompoundsOrganometallicsTin Compounds
- Molecular Formula
- C₄H₁₂Sn
Gelest TETRAMETHYLTIN (SNT7560) is an epoxy alcohol rearrangement and cleavage catalyst. It functions as an intermediate and conductive agent and is commonly used in chemical production.
Product families
- Chemical Manufacturing
Other characteristics
- Functions
- Conductive Agent, Intermediate
- Markets
- Industrial
- Coating Type
- Conductive Coating
- Technology
- Base Chemicals & Intermediates
- CASE Ingredients
- Product Features
Catalyst for rearrangement and cleavage of epoxy alcohols.; Catalyst for cyclization of ω-amino acids to lactams.; In combination with lead alkyls yields PZT films by MOCVD.; Review of reactions in combination with Grignard reagents and various organic substrates.; In combination with triethylamine and trimethylchlorosilane extends aldehydes to two carbons to enals.
- Extraction Process
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. In most cases, ALD reactions use two chemical precursors which react with a surface one at a time in a sequential, self-limiting, manner.; A thin film results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is their conformality and the tact that the amount of control provided by an ALD arrangement (where the reacting precursors are spatially separated) allows to obtain very thin deposited layers (as fine as 0.1 A per cycle).; Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films, but are stable enough to be handled and safely delivered to the reaction chamber.
- Attributes
For CVD of tin oxide transparent conductive electrodes on glass for photovoltaics and sensors; Pyrolyzed in vacuum to tin at 600-750°C; Pyrolyzed oxidatively to SnO at 350-600 °C; Forms transparent conductive oxides for photovoltaics by Plasma-enhanced chemical vapor deposition (PECVD)
- HIGHLIGHTS
This material can be deposited without the vacuum requirements of sputtering techniques. Alternative material technologies that eliminate indium include zinc, antimony and tin based oxides that can be fluorine doped.
- Standard Packaging
- 25 g, 100 g,1.5 kg, 20 kg
- Applicable Processes
- Chemicals Production
Technical data
Table 1 of 2
6 rows| Characteristic | Value | Unit |
|---|---|---|
| Delta H Vaporization | 6.8 | kcal/mole |
| Boiling Point | 74 - 75 | °C |
| Melting Point | -54.0 | °C |
| Enthalpy of Combustion | 903.5 | kcal/mole |
| Enthalpy of Formation (gas at 27°C) | -13.6 | kcal/mole |
| Enthalpy of Evaporation | 6.8 | kcal/mole |
Table 2 of 2
9 rows| Characteristic | Value | Unit |
|---|---|---|
| Flash Point | -12.0 | °C |
| Refractive Index (at 20°C) | 1.441 | — |
| Purity | 97.0 | % |
| Vapor Pressure (at -21 °C) | 10.0 | mmHg |
| Molecular Weight | 178.83 | g/mol |
| Density (at 20°C) | 1.291 | g/ml |
| Vapor Pressure (at 20°C) | 90.0 | mmHg |
| Dissociation Energy (Sn-Me Bond) | 227.0 | kJ/mole |
| Ethylene Acrylate Copolymer (pyrolysis) | 41.1 | kcal/mole |
